[Source "High-tech LED-technology and application" March issue Peng Wanhua]
1 Introduction
Semiconductor lighting sources have entered the field of lighting in batches, but there are many problems, mainly energy efficiency, reliability, light color quality and cost. The energy efficiency and light color quality are rich in content, such as visual comfort and intelligence. Adjustment control, etc., will not be described here. We will discuss the main technical problems that need to be solved, which are summarized as three high and one low, namely high luminous efficiency, high color rendering, high reliability and low cost. The main content of solving low cost is also a technical problem. To solve these four technical problems, we must adopt a series of measures in various industrial chain links, adopt new technologies, new structures, new processes, new materials, etc., and only mention the technical routes and directions that should be adopted. Product innovation has helped to make semiconductor lighting sources enter the lighting field more smoothly.
2, high luminous efficiency
The efficacy of semiconductor lighting, accurate energy efficiency, is the only indicator of energy efficiency. At present, the level of light-emitting industrialization of LED devices can reach 120-140 lm/w, and the total energy efficiency of lighting fixtures can be greater than 100 lm/w. This is still not high, the energy-saving effect is not obvious, and there is still a large distance from the theoretical value of the semiconductor device light effect of 250 lm / w. In order to achieve high light efficiency, it is necessary to solve related technical problems from various links in the industrial chain, mainly to improve internal quantum efficiency, external quantum efficiency, package light output efficiency and lamp efficiency, which are respectively described below.
2.1 Extension, chip
The following measures are taken to improve internal quantum efficiency and external quantum efficiency.
2.1.1 Substrate surface roughening and non-polar substrate
Growth of GaN using nanoscale patterned substrates, "oriented" patterned substrates or non-polar, semi-polar substrates reduces dislocation density, defect density and polar fields, and improves internal quantum efficiency.
2.1.2 Generalized homogeneous substrate
GaN is grown on Al2O3 by HVPE (Hydride Liquid Phase Epitaxy) as a mixed homogeneous substrate GaN/Al2O3. On the basis of epitaxial growth of GaN, the dislocation density can be greatly reduced by 106-107 cm-2. Improve internal quantum efficiency.
2.1.3 Improving the quantum well structure
Control the variation and variation of the I n composition, optimize the quantum well structure to increase the electron and space overlap probability, increase the radiation recombination probability, and adjust the transport of unbalanced carriers to improve the internal quantum efficiency.
2.1.4 New structure of the chip
Adopting the new structure requires the chip to emit light on six sides, adopting new technology on the chip interface to perform various surface roughening methods, reducing the probability of photon reflection on the chip interface, and increasing the surface light transmittance to improve the external quantum efficiency of the chip.
For more information, please refer to the March issue of "High-tech LED--Technology and Applications" magazine
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